Wetin na di difrɛns bitwin intanɛnt rɛsistɛns ɛn impedans?

Fɔ grap di nyuans dɛn fɔ intanɛnt rɛsistɛns ɛn impedans, i rili impɔtant fɔ no se impedans gɛt fɔ du wit AC (ɔda kɔrɛnt), we intanɛnt rɛsistɛns de mɔ asɔsiet wit DC (dayrɛkt kɔrɛnt). Pan ɔl we dɛn difrɛn kɔntɛks, dɛn kɔlkyulɛshɔn de fala di sem fɔmula, R=V/I, usay R na intanɛnt rɛsistɛns ɔ impedans, V na vɔltɛm, ɛn i na kɔrɛnt.

Intanɛt rɛsistɛns: di barɛri fɔ ilɛktron flɔ .

Intanɛt rɛsistɛns kin kɔmɔt frɔm di kɔlishin ɔf ɛliktrɔn dɛn wit di kɔndɔkt in ayɔn lat, we kin chenj ilɛktrik ɛnaji to ɔt. Tink bɔt intanɛnt rɛsistɛns as wan kayn frikshɔn we de ambɔg ilɛktron muvmɛnt. Insay sɛnɛriɔ usay ɔltɛna kɔrɛnt de flɔ tru wan rɛsistiv ɛlimɛnt, i de jenarayz wan vɔltɛm drɔp. Dis drop de stil de insay faz wit di kɔrɛnt, we de sho wan dairekt rilayshɔn bitwin di kɔrɛnt flɔ ɛn di intanɛnt rɛsistɛns we dɛn mit.

Impedans: Wan brayt kɔnsɛpt we de kɔba intanɛnt rɛsistɛns .

impedans riprizent wan mכr komprεhεnsiv tεm we de kapsayt כl fכm dεm fכ opozishכn to εlektrכn fכ fכlכ. Dis inklud nɔto jɔs intanɛnt rɛsistɛns, bɔt bak fɔ riaktans. Na wan ubiquitous konsept we dɛn fɛn akɔdin to ɔl di sɛrkyut ɛn kɔmpɔnɛnt dɛn.

I impɔtant fɔ difrɛns bitwin riaktans ɛn impedans. Riaktans spɛshal wan de tɔk bɔt di ɔpɔzishɔn we dɛn de gi to AC kɔrɛnt bay indukt ɛn kapasitɔ, ɛlimɛnt dɛn we de difrɛn akɔdin to difrɛn batri dɛn. Dis vεryabiliti de sho insay di difrεnt dayagram dεm εn ilektrikal valyu dεm we kכntribyushכn fכ εvri batri tכp.

Fɔ demystify impedance, wi kin tɔn to di Randles mɔdel. Dis mכdel, we dεn sho na Fig 1, de intagret R1, R2, alongsay C. spεshal, R1 riprizent di intanal rεsistεns, we R2 kכrεspכnd to di chכj tכnfכs rεsistεns. Apat frɔm dat, C de sho wan dabl-layer kapasitɔ. Notably, di Randles model kin ɔltɛm pul inductive reactance, as in impak pan bateri pefɔmɛns, patikyula na lɔwa frikshɔn, na minimal.

Fig 1: Randles mɔdel fɔ wan lid asid bateri

Kɔmpiashɔn fɔ intanɛnt rɛsistɛns ɛn impedans .

Fɔ mek wi no klia wan, dɛn dɔn sho wan ditayla kɔmpiashɔn fɔ intanɛnt rɛsistɛns ɛn impedans dɔŋ ya.

Aspek fɔ ilɛktrik prɔpati .	Intanɛt rɛsistɛns (R) .	impedans (Z) .
Sakit Aplikeshɔn .	Yuz am fɔs na sɔrkwit dɛn we de ɔprɛt pan dairekt kɔrɛnt (DC).	predominantly employed in circuits we dɛn mek fɔ ɔltɛna kɔrɛnt (AC).
Sakit Prɛzɛns .	Observable in ɔl tu di ɔltɛm kɔrɛnt (AC) ɛn dairekt kɔrɛnt (DC) sɛrkyut dɛn.	Eksklusiv to ɔltɛnativ kɔrɛnt (AC) sɔrkwit dɛn, we nɔ de insay DC.
Usay i kɔmɔt	Orijin frɔm ɛlimɛnt dɛn we de ambɔg di flɔ fɔ ilɛktrik kɔrɛnt.	kɔmɔt frɔm wan kɔmbaynshɔn pan ɛlimɛnt dɛn we de agens ɛn riak to di ilɛktrik kɔrɛnt.
Nyumɛrik ɛksprɛshɔn .	Eksprɛs yuz difinitiv rial nɔmba, fɔ ɛgzampul, 5.3 ohms.	Eksprɛs tru ɔl tu di rial nɔmba ɛn imajinari kɔmpɔnɛnt dɛn, we dɛn ɛgzampul bay ‘R + IK’.
frikshɔn dipɛnshɔn .	I valyu de kɔntinyu fɔ de kɔnstant ilɛksɛf di frɛkuɛns we di DC kɔrɛnt de.	I valyu de chenj chenj wit di chenj we di AC kɔrɛnt de chenj.
Faz Karakta .	nɔ de sho ɛni faz angul ɔ magnitud atribyut dɛn.	we dɛn kɔl ɔl tu wan difinitiv faz angul ɛn magnitud.
Biɛvhɔ na wan ilɛktromagnetik fil .	na in de sho se pawa dissipeshɔn de sho we dɛn de ɛkspos to wan ilɛktromagnetik fil.	De sho ɔl tu di pawa dissipeshɔn ɛn di kapasiti fɔ kip ɛnaji na ilɛktromagnetik fil.

Precision in bateri intanal resistans mejament .

As sɔlvishɔn prɔvayda we spɛshal fɔ monitar ɛn manej bak-ap batri, DFUN ɛmpɛshmɛnt pan bateri intanɛnt rɛsistɛns mɛzhɔmɛnt alayns wit established industri prɔsis, drɔ inspɛkshɔn frɔm bɔku bɔku aksept divays dɛn lɛk Fluk ɔ Hioki. Levayj mɛtɔd dɛn we tan lɛk dɛn divays ya, we dɛn sabi fɔ dɛn kɔrɛkt ɛn ɔlsay we di kɔstɔma dɛn aksept, wi de fala di standad dɛn lɛk IEE1491-2012 ɛn IEE1188.

IEE1491-2012 de gayd wi fɔ ɔndastand intanɛnt rɛsistɛns as dinamik paramita, we nid fɔ kɔntinyu fɔ trak fɔ gej divɛyɔshɔn frɔm di beslayn. Na da tɛm de, di IEE1188 standad de sɛt wan trɛshɔld fɔ akshɔn, advays se if di intanɛnt rɛsistɛns pas 20% pan di standad layn, dɛn fɔ tink bɔt di bateri fɔ riples ɔ sɔbjɛkt to dip saykl ɛn richaj.

We wi de muv frɔm dɛn prinsipul ya, wi we fɔ mɛzhɔ intanɛnt rɛsistɛns involv fɔ sɔbjɛkt di bateri to wan fiks frikyuɛnsi ɛn kɔrɛnt, we dɛn fala wit vɔltɛm sampling. Di prɔsesin we de afta dat, inklud rɛktifikɛshɔn ɛn filta tru wan ɔpreshɔnal amplifaya sɛrkyut, de gi wan kɔrɛkt mɛzhɔmɛnt fɔ intanɛnt rɛsistɛns. Rimarkably swift, dis mεtכd tipikכs kכnklud insay 100 milisekɔnd, bost wan admirable akכda rεnj fכ 1% to 2%.

Fɔ dɔn, prɛsishɔn insay intanɛnt rɛsistɛns mɛzhɔmɛnt de mek shɔ se dɛn de wach di batri dɛn fayn fayn wan, we de kɔntribyut to dɛn lɔng layf. Dis gayd aim fɔ ɛp di wan dɛn we kin si am chalenj fɔ difrɛns bitwin intanɛnt rɛsistɛns ɛn impedans, we de fasilit wan nuans ɔndastandin fɔ dɛn ilɛktrik prɔpati ya. Fɔ mek yu ebul fɔ no mɔ bɔt dis, yu kin fɛn ɔda tin dɛn frɔm DFUN Tech na.