Fɔ grap di nyuans dɛm fɔ intanɛnt rɛsistɛns ɛn impedans, i impɔtant fɔ no se impedans gɛt fɔ du wit AC (ɔltɛrnatin kɔrɛnt), we intanɛnt rɛsistɛns gɛt mɔ fɔ du wit DC (dayrɛkt kɔrɛnt). Pan ɔl we dɛn difrɛn kɔntɛks, dɛn kɔlkyulɛshɔn de fala di sem fɔmula, R=V/I, usay R na intanɛnt rɛsistɛns ɔ impedans, V na vɔlɔt, ɛn I na kɔrɛnt.
Intanɛt Rɛsistɛns: Di Barɛri fɔ Ilɛktron Flɔ
Intanɛt rɛsistɛns de kɔmɔt frɔm di kɔlishin we ɛliktrɔn dɛn de kɔlishɔn wit di kɔndɔkt in ayɔn lɛtis, we de chenj ilɛktrik ɛnaji to ɔt. Tink bɔt intanɛnt rɛsistɛns as wan kayn frikshɔn we de ambɔg ilɛktron muvmɛnt. Insay sɛnɛriɔ usay ɔltɛna kɔrɛnt de flɔ tru wan rɛsistiv ɛlimɛnt, i de mek wan vɔlɔt drɔp. Dis dכp de stil in fεz wit di kכrant, we de sho wan dayrεkt rilayshכn bitwin di kכrant fכ fכlכ εn di intanεt rεsistεns we dεn mit.
Impedans: Wan Broda Kɔnsɛpt we Kɔmpas Intanɛt Rɛsistɛns
Impedans riprizent wan mכr komprεhεnsiv tεm we de kapsul כl fכm כpכzishכn to εlektrכn fכ fכlכ. Dis inklud nכto jכs intanεt rεsistεns, bכt riaktans bak. Na wan kɔnsɛpt we de ɔlsay we dɛn kin fɛn akɔdin to ɔl di sɔrkwit ɛn kɔmpɔnɛnt dɛn.
I impɔtant fɔ difrɛns bitwin riaktans ɛn impedans. Riaktans spɛshal wan de tɔk bɔt di opɔzishɔn we indukta ɛn kapasitɔ dɛn de ɔfrɛd to AC kɔrɛnt, ɛlimɛnt dɛn we de difrɛn akɔdin to difrɛn kayn bateri. Dis vεryabiliti de sho insay di difrεn dayagram dεm εn ilektrikal valyu dεm we kכntribyut to εvri batri tכp.
Fɔ demystify impedans, wi kin tɔn to di Randles mɔdel. Dis mכdel, we dεn sho na fכg 1, de intagret R1, R2, alongsay C. Speshal, R1 de riprizent di intanεt rεsistεns, we R2 kכrεspכnd to di chaj tכnfכs rεsistεns. Apat frɔm dat, C de sho wan dabl-layer kapasitɔ. Notis, di Randles mכdel kin kכl induktiv riaktans, as in impak pan bateri pεrformεns, patikyular pan lכw frikכnshכn, na sכm.
Fig 1: Randles model fɔ wan lid asid bateri
Kɔmpiashɔn fɔ Intanɛt Rɛsistɛns ɛn Impedans
Fɔ mek wi no klia wan, dɛn dɔn sho wan ditayl kɔmpiashɔn fɔ di intanɛnt rɛsistɛns ɛn impedans dɔŋ ya.
Aspek fɔ Ilɛktrik Prɔpati |
Intanɛt Rɛsistɛns (R) . |
Impedans (Z) ɛn . |
Aplikeshɔn fɔ di Sakit |
Yutilayz prɛshɔ insay sɔrkwit dɛn we de ɔpreshɔn pan dairekt kɔrɛnt (DC). |
Predominantly employed in sirkit dɛn we dɛn mek fɔ ɔltɛnatin kɔrɛnt (AC). |
Sakit Prɛzɛns |
Observable in ɔl tu di ɔltɛn kɔrɛnt (AC) ɛn dairekt kɔrɛnt (DC) sɔrkwit. |
Eksklusiv to ɔltɛn kɔrɛnt (AC) sɛrkyut, nɔ de na DC. |
Usay i kɔmɔt |
I kɔmɔt frɔm ɛlimɛnt dɛn we de ambɔg di flɔ ɔf ilɛktrik kɔrɛnt. |
Aris frɔm wan kɔmbaynshɔn ɔf ɛlimɛnt dɛn we de rɛsist ɛn riak to di ilɛktrik kɔrɛnt. |
Numɛrik Ɛksprɛshɔn |
Dɛn kin ɛksprɛs am bay we dɛn yuz difinitiv rial nɔmba dɛn, fɔ ɛgzampul, 5.3 ɔm. |
εksprεs tru כl tu di rial nכmba dεm εn imajinari kכmכpכnt dεm, we dεn egzampl bay 'R + ik'. |
Frikyuɛnsi Dipɛnsin |
I valyu de kɔntinyu fɔ de kɔnstant ilɛksɛf di frɛkuɛns na di DC kɔrɛnt. |
I valyu de chenj wit di chenj we di AC kɔrɛnt de chenj. |
Faz Karakta |
Nɔ de sho ɛni faz angul ɔ magnitud atribyut. |
Karakta bay ɔl tu wan difinitiv faz angul ɛn magnitud. |
Bihayvya na wan Ilɛktromagnetik Fild |
Solely de sho pawa dissipeshɔn we i de ɛkspos to ilɛktromagnetik fil. |
De sho ɔl tu di pawa dissipeshɔn ɛn di kapasiti fɔ kip ɛnaji na ilɛktromagnetik fil. |
Prɛsishɔn in Batri Intanɛt Rɛsistɛns Mɛzhɔmɛnt
As sɔlvishɔn prɔvayda we spɛshal fɔ monitar ɛn manej bak-ap batri, . DFUN ɛmpɛshmɛnt pan bateri intanɛnt rɛsistɛns mɛzhɔmɛnt alayns wit established industri prɔsis, we de pul inspɛkshɔn frɔm divays dɛn we bɔku pipul dɛn aksept lɛk Fluke ɔ Hioki. Levayj mɛtɔd dɛn we fiba dɛn divays ya, we dɛn sabi fɔ dɛn akkuracy ɛn bɔku bɔku kɔstɔma akseptɛns, wi de fala standad dɛn lɛk IEE1491-2012 ɛn IEE1188.
IEE1491-2012 de gayd wi fɔ ɔndastand intanɛnt rɛsistɛns as dinamik paramita, we nid fɔ kɔntinyu fɔ trak fɔ gaj dɛvyayshɔn frɔm di beslayn. Na da tɛm de, di IEE1188 standad de sɛt wan trɛshɔld fɔ akshɔn, we de advays se if di intanɛnt rɛsistɛns pas 20% pan di standad layn, dɛn fɔ tink bɔt di bateri fɔ riples am ɔ put am ɔnda dip saykl ɛn richaj.
We wi muv frɔm dɛn prinsipul ya, di we aw wi de mɛzhɔ di intanɛnt rɛsistɛns involv fɔ put di bateri ɔnda wan fiks frikshɔn ɛn kɔrɛnt, dɔn wi de fala di vɔlɔt sampling. Di prɔsesin we de afta dat, inklud rɛktifikɛshɔn ɛn filta tru wan ɔpreshɔnal amplifaya sɔrkwit, de gi wan kɔrɛkt mɛzhɔmɛnt fɔ intanɛnt rɛsistɛns. Rimarkably swift, dis mεtכd tipikli kכnklud insay 100 milisekכnd, bost wan admirable akkuracy rεnj fכ 1% to 2%.
Fɔ dɔn, prɛsishɔn insay intanɛnt rɛsistɛns mɛzhɔmɛnt de mek shɔ se dɛn de wach di batri dɛn fayn fayn wan, we de kɔntribyut to dɛn lɔng layf. Dis gayd de aim fɔ ɛp di wan dɛn we kin si am se i nɔ izi fɔ difrɛns bitwin intanɛnt rɛsistɛns ɛn impedans, we go mek i izi fɔ ɔndastand dɛn ilɛktrik prɔpati ya fayn fayn wan. Fɔ no mɔ ɛn ɔndastand mɔ, yu kin fɛn ɔda tin dɛn frɔm DFUN Tek.
